Contamination control study in grown oxide for reliable CMOS operations

  • K. Singh Scientist, U.R. Rao Satellite Centre, Bangalore, Karnataka, India.
  • V Venkatesh Scientist, U.R. Rao Satellite Centre, Bangalore, Karnataka, India.

Abstract

Contamination control in the grown oxide affects the device performance and considered as the main parameter in the fabrication process. The presence of mobile ions in the oxide shifts the flat-band voltage of the device and the key parameters responsible for this behavior are the repeatability of the process parameters and overall fabrication environment. Further cleanliness of the fabrication tool, stability of process parameters and deposition conditions can also contaminate the oxide quality. In present article various parameters such as thickness, cleanliness, and process environment are studied and analyzed.


How to cite this article:
Singh K, Venkatesh V. Contamination Control Study in Grown Oxide for Reliable CMOS Operations. J Adv Res Electro Engi Tech 2020; 7(3&4): 6-9.


DOI: https://doi.org/10.24321/2456.1428.202003

References

1. H. Baltes, O. Brand, G. K. Fedder, C. Hierold, J. Korvink, O. Tabata . Advanced Micro and Nanosystems, Vol. 2. CMOS – MEMS - 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
2. B E Dealand A S Grove,” General relationship for the thermal oxidation of silicon,” Journal of Applied Physics, 1965,12(36):3770-3778
3. Anathsuresh, Vinoy, Gopalakrishnan, Bhat & Aatre, Micro & Smart Systems, Wiley India,2010
4. Graham Fisher, M R Seacrist, R W Standley,” Single crystal growth and wafer technologies,” Proceedings of the IEEE, 2012,100, 2012: 1454-1474
5. W.Kern,” The evolution of silicon wafer cleaning technology,” J. Electrochemical Soc., 1990,6(137):1887-1891
6. Mohamed Gad-el-Hak. The MEMS Handbook,USA,CRC Press 2002:460-465
Published
2021-06-05
How to Cite
SINGH, K.; VENKATESH, V. Contamination control study in grown oxide for reliable CMOS operations. Journal of Advanced Research in Electronics Engineering and Technology, [S.l.], v. 7, n. 3&4, p. 6-9, june 2021. ISSN 2456-1428. Available at: <http://www.thejournalshouse.com/index.php/electronics-engg-technology-adr/article/view/153>. Date accessed: 21 june 2024.